Title :
1.4 kV, 25 A, PT and NPT trench IGBTs with optimum forward characteristics
Author :
Udrea, F. ; Waind, P.R. ; Thomson, J. ; Trajkovic, T. ; Chan, S.S.M. ; Huang, S. ; Amaratunga, G.A.J.
Author_Institution :
Dept. of Eng., Cambridge Univ., UK
Abstract :
In this paper, we report the development of 1.4 kV 25 A punch-through (PT) and nonpunch-through (NPT) trench IGBTs with ultra-low on-resistance, latch-up free operation and highly superior overall performance when compared to previously reported DMOS IGBTs in the same class. We have fabricated both PT and transparent anode NPT devices to cover a wide range of applications which require very low on-state losses or very fast time with ultra-low switching losses. The minimum forward voltage drop at the standard current density of 100 A/cm 2 was 1.1 V for PT nonirradiated devices and 2.1 V for 16 MRad PT irradiated devices. The nonirradiated transparent emitter NPT structure has a typical forward voltage drop of 2.2 V, a turn-off time below 100 ns and turn-off energy losses of 11.2 mW/cm2 at 125 C. The maximum controllable current density was in excess of 1000 A/cm 2
Keywords :
current density; electric resistance; insulated gate bipolar transistors; isolation technology; losses; power bipolar transistors; power semiconductor switches; radiation effects; switching; transparency; 1.4 kV; 100 ns; 11 V; 125 C; 16 Mrad; 2.1 V; 2.2 V; 25 A; NPT trench IGBTs; PT devices; PT irradiated devices; PT nonirradiated devices; PT trench IGBTs; forward voltage drop; latch-up free operation; maximum controllable current density; minimum forward voltage drop; nonirradiated transparent emitter NPT structure; nonpunch-through trench IGBTs; on-state losses; optimum forward characteristics; punch-through trench IGBTs; standard current density; transparent anode NPT devices; turn-off energy losses; turn-off time; ultra-low on-resistance; ultra-low switching losses; Anodes; Cathodes; Current density; Design optimization; Electric breakdown; Energy loss; Insulated gate bipolar transistors; Switching loss; Thyristors; Voltage control;
Conference_Titel :
Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on
Conference_Location :
Toronto, Ont.
Print_ISBN :
0-7803-5290-4
DOI :
10.1109/ISPSD.1999.764082