A new high-voltage integrated switch: the “thyristor dual” function

Author

Sanchez, J.L. ; Breil, M. ; Austin, P. ; Laur, J.-P. ; Jalade, J. ; Rousset, B. ; Foch, H.

Author_Institution

Lab. d´´Autom. et d´´Anal. des Syst., CNRS, Toulouse, France

fYear

1999

fDate

1999

Firstpage

157

Lastpage

160

Abstract

In this paper, a new monolithic integrated device providing the “thyristor dual” function without auxiliary supply and based on the functional integration mode is investigated. The influence of the physical and technological parameters of this new structure upon the main electrical characteristics and the physical behaviour has been analyzed using the ATLAS software tool. An optimized device is proposed and test structures have been fabricated

Keywords

MOS-controlled thyristors; optimisation; power semiconductor switches; semiconductor device models; semiconductor device testing; software tools; ATLAS software tool; auxiliary supply; electrical characteristics; functional integration mode; high-voltage integrated switch; monolithic integrated device; optimized device; physical behaviour; physical parameters; technological parameters; test structures; thyristor dual function switch; Application software; Electric variables; MOSFET circuits; Semiconductor diodes; Software tools; Switches; Testing; Thyristors; Voltage control; Zero voltage switching;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on

Conference_Location

Toronto, Ont.

ISSN

1063-6854

Print_ISBN

0-7803-5290-4

Type

conf

DOI

10.1109/ISPSD.1999.764086

Filename

764086