Title :
A comparative analysis of CMOS low noise amplifiers for RF applications
Author :
Ge, Yongmin ; Mayaram, Kartikeya
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Washington State Univ., Pullman, WA, USA
fDate :
31 May-3 Jun 1998
Abstract :
Four CMOS RF low noise amplifier (LNA) circuits have been analyzed. These analyses include the effect of induced gate noise for the MOSFET. The noise factor contribution from each noise source is derived and these circuits are then compared for a minimum noise factor. The MOSIS HP 0.35 μm and 0.8 μm CMOS technologies have been used for performance comparisons. An automatic synthesis system for LNA design is also described
Keywords :
CMOS analogue integrated circuits; SPICE; circuit CAD; circuit layout CAD; equivalent circuits; feedback amplifiers; integrated circuit layout; integrated circuit noise; radio receivers; radiofrequency amplifiers; 0.35 micron; 0.8 micron; CMOS RF low noise amplifier circuits; LNA layout; MOSIS HP CMOS technologies; RF receivers; SPICE; automatic synthesis system; common-gate stage; common-source stage; induced gate noise; minimum noise factor; noise factor contribution; optimization; performance comparisons; shunt feedback; source degeneration; Acoustic noise; CMOS technology; Circuit noise; Inductors; Low-noise amplifiers; MOSFET circuits; Noise figure; Noise generators; Radio frequency; Radiofrequency amplifiers;
Conference_Titel :
Circuits and Systems, 1998. ISCAS '98. Proceedings of the 1998 IEEE International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-4455-3
DOI :
10.1109/ISCAS.1998.698844
