Title :
High voltage Ni/4H-SiC Schottky rectifiers
Author :
Chilukuri, Ravi K. ; Baliga, B.Jayant
Author_Institution :
Power Semicond. Res. Center, North Carolina State Univ., Raleigh, NC, USA
Abstract :
In this paper, we report characteristics of 4H-SiC Ni/Al Schottky rectifiers operating at 1.5 to 2.5 kV and terminated using low energy Ar implants. At room temperature, the nickel Schottky diode exhibited a barrier height of 1.7 eV and an ideality factor of 1.07. After annealing, the Schottky diode fabricated on a 20 μm thick epilayer had a forward voltage drop of 1.16 V at 100 A/cm2, the lowest value ever reported for a 1.6 kV rectifier. A breakdown voltage of >2500 V was measured on diodes fabricated using 40 μm epilayers. The measured specific on-resistance of 20 μm and 40 μm epi diodes was within ~1.5× of the calculated drift region resistance over a 0-200°C temperature range
Keywords :
Schottky barriers; Schottky diodes; aluminium; annealing; electric resistance; nickel; power semiconductor diodes; semiconductor device breakdown; semiconductor device metallisation; semiconductor device testing; semiconductor epitaxial layers; silicon compounds; solid-state rectifiers; wide band gap semiconductors; 0 to 200 C; 1.16 V; 1.5 to 2.5 kV; 1.6 kV; 1.7 eV; 20 micron; 2500 V; 40 micron; 4H-SiC Ni/Al Schottky rectifiers; Al-Ni-SiC; Schottky diode; annealing; barrier height; breakdown voltage; drift region resistance; epi diodes; epilayer; forward voltage drop; high voltage Ni/4H-SiC Schottky rectifiers; ideality factor; low energy Ar implant terminations; nickel Schottky diode; operating voltage; specific on-resistance; Argon; Electrical resistance measurement; Implants; Nickel; Rectifiers; Schottky barriers; Schottky diodes; Semiconductor diodes; Silicon carbide; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on
Conference_Location :
Toronto, Ont.
Print_ISBN :
0-7803-5290-4
DOI :
10.1109/ISPSD.1999.764087
