• DocumentCode
    2793578
  • Title

    Influence of defects on insulating properties of XLPE cable

  • Author

    Katsuta, G. ; Toya, A. ; Katakai, S. ; Kanaoka, M. ; Sekii, Y.

  • Author_Institution
    Tokyo Electric Power Co. Inc., Japan
  • fYear
    1991
  • fDate
    8-12 Jul 1991
  • Firstpage
    485
  • Abstract
    The influence of defects on the insulating properties of XLPE (cross-linked polyethylene) cables was studied using XLPE cables containing artificial defects. It was confirmed that the AC breakdown strength of the cables decreases with the increase of void size, while the existence of voids does not have any effect on impulse breakdown strength. The contaminants and the protrusions decrease both AC and impulse breakdown strengths. The value of the life exponent, n, of the V-t characteristics of the XLPE cable containing voids was estimated to be smaller than that of the cables containing contaminants or protrusions. In addition to to the influence of those defects on initial and long-term performance of the cables, the influence of impulse voltage on the long-term performance of the cable, together with the behavior of the space charge accumulated around the defects, was investigated. It was found that impulse voltage greatly affects the long-term performance of cables containing voids
  • Keywords
    cable insulation; electric breakdown of solids; organic insulating materials; polymers; power cables; space charge; AC breakdown strength; V-t characteristics; XLPE cable; contaminants; cross-linked polyethylene; defects; impulse breakdown strength; impulse voltage; insulating properties; long-term performance; protrusions; space charge; void size; Breakdown voltage; Cable insulation; Cable shielding; Cables; Conductors; Dielectrics and electrical insulation; Electric breakdown; Impulse testing; Pressure control; Space charge;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Properties and Applications of Dielectric Materials, 1991., Proceedings of the 3rd International Conference on
  • Conference_Location
    Tokyo
  • Print_ISBN
    0-87942-568-7
  • Type

    conf

  • DOI
    10.1109/ICPADM.1991.172103
  • Filename
    172103