Title :
A 4H-SiC trench MOS barrier Schottky (TMBS) rectifier
Author :
Khemka, V. ; Ananthan, V. ; Chow, T.P.
Author_Institution :
Center for Integrated Electron. & Electron. Manuf., Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
We present the first experimental demonstration of a 4H-SiC trench MOS barrier Schottky (TMBS) rectifier. The forward and reverse characteristics of the TMBS devices are studied as a function of various design parameters and compared with those of planar Schottky and planar PiN rectifiers. More than two orders of magnitude improvement in the leakage current has been obtained over a Ni/4H-SiC Schottky rectifier. Dynamic switching measurements on the device indicated negligible reverse recovery current
Keywords :
MIS structures; Schottky diodes; isolation technology; leakage currents; power semiconductor diodes; power semiconductor switches; semiconductor device measurement; silicon compounds; solid-state rectifiers; wide band gap semiconductors; 4H-SiC trench MOS barrier Schottky TMBS; 4H-SiC trench MOS barrier Schottky rectifier; Ni/4H-SiC Schottky rectifier; SiC; TMBS devices; design parameters; dynamic switching measurements; forward characteristics; leakage current; planar PiN rectifiers; planar Schottky rectifiers; reverse characteristics; reverse recovery current; Current measurement; Electric breakdown; Fabrication; Leakage current; Low voltage; Manufacturing; Photonic band gap; Rectifiers; Schottky barriers; Silicon carbide;
Conference_Titel :
Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on
Conference_Location :
Toronto, Ont.
Print_ISBN :
0-7803-5290-4
DOI :
10.1109/ISPSD.1999.764088
