A 4H-SiC trench MOS barrier Schottky (TMBS) rectifier

Author

Khemka, V. ; Ananthan, V. ; Chow, T.P.

Author_Institution

Center for Integrated Electron. & Electron. Manuf., Rensselaer Polytech. Inst., Troy, NY, USA

fYear

1999

fDate

1999

Firstpage

165

Lastpage

168

Abstract

We present the first experimental demonstration of a 4H-SiC trench MOS barrier Schottky (TMBS) rectifier. The forward and reverse characteristics of the TMBS devices are studied as a function of various design parameters and compared with those of planar Schottky and planar PiN rectifiers. More than two orders of magnitude improvement in the leakage current has been obtained over a Ni/4H-SiC Schottky rectifier. Dynamic switching measurements on the device indicated negligible reverse recovery current

Keywords

MIS structures; Schottky diodes; isolation technology; leakage currents; power semiconductor diodes; power semiconductor switches; semiconductor device measurement; silicon compounds; solid-state rectifiers; wide band gap semiconductors; 4H-SiC trench MOS barrier Schottky TMBS; 4H-SiC trench MOS barrier Schottky rectifier; Ni/4H-SiC Schottky rectifier; SiC; TMBS devices; design parameters; dynamic switching measurements; forward characteristics; leakage current; planar PiN rectifiers; planar Schottky rectifiers; reverse characteristics; reverse recovery current; Current measurement; Electric breakdown; Fabrication; Leakage current; Low voltage; Manufacturing; Photonic band gap; Rectifiers; Schottky barriers; Silicon carbide;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on

Conference_Location

Toronto, Ont.

ISSN

1063-6854

Print_ISBN

0-7803-5290-4

Type

conf

DOI

10.1109/ISPSD.1999.764088

Filename

764088