Title :
A physics-based model for the avalanche ruggedness of power diodes
Author :
Hurkx, G.A.M. ; Koper, N.
Author_Institution :
Philips Res. Lab., Eindhoven, Netherlands
Abstract :
The avalanche ruggedness of power diodes is investigated by experiments and numerical device simulations. An analytical model is developed that describes the dependence of the maximum allowable energy during an unclamped inductive switching test on test temperature, diode area, breakdown voltage, hot spots and the critical temperature for the onset of second breakdown
Keywords :
avalanche breakdown; numerical analysis; power semiconductor diodes; power semiconductor switches; semiconductor device breakdown; semiconductor device models; semiconductor device reliability; semiconductor device testing; analytical model; avalanche ruggedness; breakdown voltage; diode area; hot spots; maximum allowable energy; numerical device simulations; physics-based model; power diodes; second breakdown; second breakdown critical temperature; test temperature; unclamped inductive switching test; Analytical models; Avalanche breakdown; Breakdown voltage; Circuit testing; Current measurement; Laboratories; Numerical simulation; Power semiconductor switches; Semiconductor diodes; Temperature dependence;
Conference_Titel :
Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on
Conference_Location :
Toronto, Ont.
Print_ISBN :
0-7803-5290-4
DOI :
10.1109/ISPSD.1999.764089
