A physics-based model for the avalanche ruggedness of power diodes

Author

Hurkx, G.A.M. ; Koper, N.

Author_Institution

Philips Res. Lab., Eindhoven, Netherlands

fYear

1999

fDate

1999

Firstpage

169

Lastpage

172

Abstract

The avalanche ruggedness of power diodes is investigated by experiments and numerical device simulations. An analytical model is developed that describes the dependence of the maximum allowable energy during an unclamped inductive switching test on test temperature, diode area, breakdown voltage, hot spots and the critical temperature for the onset of second breakdown

Keywords

avalanche breakdown; numerical analysis; power semiconductor diodes; power semiconductor switches; semiconductor device breakdown; semiconductor device models; semiconductor device reliability; semiconductor device testing; analytical model; avalanche ruggedness; breakdown voltage; diode area; hot spots; maximum allowable energy; numerical device simulations; physics-based model; power diodes; second breakdown; second breakdown critical temperature; test temperature; unclamped inductive switching test; Analytical models; Avalanche breakdown; Breakdown voltage; Circuit testing; Current measurement; Laboratories; Numerical simulation; Power semiconductor switches; Semiconductor diodes; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on

Conference_Location

Toronto, Ont.

ISSN

1063-6854

Print_ISBN

0-7803-5290-4

Type

conf

DOI

10.1109/ISPSD.1999.764089

Filename

764089