• DocumentCode
    2793620
  • Title

    The thermally stimulated current in zinc oxide varistors with TiO 2 additives

  • Author

    Lee, Joon-Ung ; Chang, Kyung-Ook ; Park, Choon-Bae ; Grzybowski, S.

  • Author_Institution
    Dept. of Electr. Eng., Kwangwoon Univ., Seoul, South Korea
  • fYear
    1991
  • fDate
    8-12 Jul 1991
  • Firstpage
    502
  • Abstract
    To contribute more information on the conduction mechanism in ZnO varistors, a study of ZnO varistors with TiO2 additives was conducted. The properties of ZnO varistors are found to depend on the grain structure of ZnO. The mechanism of nonlinear conduction of ZnO may be explained on the basis of the grain structure. The TSC (thermally stimulated current) spectrum was measured to study the trapped carriers in ZnO varistors. Four peaks of TSC may be distinguished on the spectrum of TSC. The origin of the first, second, and third TSC peaks was attributed to the detrapping of the trapped electrons in the shallow trap, donor level, and deep trap, respectively. The origin of the fourth peak was attributed to the process of depolarization of the donor ions in the depleted layer. Adding TiO2 to ZnO varistors caused the leakage current to increase
  • Keywords
    ceramics; crystal microstructure; electrical conductivity of crystalline semiconductors and insulators; electron traps; leakage currents; semiconductor materials; titanium compounds; varistors; zinc compounds; TiO2 additives; ZnO varistors; ZnO-TiO2; conduction mechanism; deep trap; depleted layer; depolarization; detrapping; donor ion depolarisation; donor level; grain structure; leakage current; nonlinear conduction; semiconductors; shallow trap; thermally stimulated current; trapped carriers; Additives; Ceramics; Electron traps; Equations; Fabrication; Low voltage; Temperature dependence; Temperature distribution; Varistors; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Properties and Applications of Dielectric Materials, 1991., Proceedings of the 3rd International Conference on
  • Conference_Location
    Tokyo
  • Print_ISBN
    0-87942-568-7
  • Type

    conf

  • DOI
    10.1109/ICPADM.1991.172107
  • Filename
    172107