DocumentCode
2793638
Title
A new wide SOA DC-EST structure with diode diverter
Author
Sawant, Shankar ; Baliga, B.Jayant
Author_Institution
Power Semicond. Res. Center, North Carolina State Univ., Raleigh, NC, USA
fYear
1999
fDate
1999
Firstpage
173
Lastpage
176
Abstract
A novel emitter-switched thyristor (EST) structure with diode diverter is introduced to obtain superior current saturation characteristics with excellent forward bias SOA (FBSOA) without compromising the on-state voltage drop. The new structure comprises a diode diverter connected to the P-base region of the DC-EST. At low current densities, the structure operates like a floating P-base DC-EST with a low forward voltage drop. At higher current densities, the diode diverter diverts the hole current to the cathode, reducing the parasitic thyristor latch-up susceptibility. Extensive numerical simulations are presented to analyze the physics of operation of this novel structure. Experimental results are reported, confirming the superior characteristics observed through simulations. Current saturation control was observed by varying the diode knee voltage. The DC-EST with diode diverter is shown to have a square FBSOA. The saturation current density was lowered by a factor of 1.5×, which is desirable to achieve good short circuit SOA (SCSOA). The diode diverter concept is shown to be especially advantageous in the high voltage (4 kV) regime
Keywords
MOS-controlled thyristors; cathodes; current density; power semiconductor diodes; semiconductor device models; semiconductor device testing; 4 kV; DC-EST; DC-EST structure; FBSOA; P-base region; current density; current saturation characteristics; current saturation control; diode diverter; diode knee voltage; emitter-switched thyristor structure; floating P-base DC-EST operation; forward bias SOA; forward voltage drop; high voltage regime; hole current; numerical simulations; on-state voltage drop; parasitic thyristor latch-up susceptibility; saturation current density; short circuit SOA; square FBSOA; wide SOA; Cathodes; Circuit simulation; Current density; Diodes; Low voltage; Numerical simulation; Physics; Semiconductor optical amplifiers; Thyristors; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on
Conference_Location
Toronto, Ont.
ISSN
1063-6854
Print_ISBN
0-7803-5290-4
Type
conf
DOI
10.1109/ISPSD.1999.764090
Filename
764090
Link To Document