• DocumentCode
    2793638
  • Title

    A new wide SOA DC-EST structure with diode diverter

  • Author

    Sawant, Shankar ; Baliga, B.Jayant

  • Author_Institution
    Power Semicond. Res. Center, North Carolina State Univ., Raleigh, NC, USA
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    173
  • Lastpage
    176
  • Abstract
    A novel emitter-switched thyristor (EST) structure with diode diverter is introduced to obtain superior current saturation characteristics with excellent forward bias SOA (FBSOA) without compromising the on-state voltage drop. The new structure comprises a diode diverter connected to the P-base region of the DC-EST. At low current densities, the structure operates like a floating P-base DC-EST with a low forward voltage drop. At higher current densities, the diode diverter diverts the hole current to the cathode, reducing the parasitic thyristor latch-up susceptibility. Extensive numerical simulations are presented to analyze the physics of operation of this novel structure. Experimental results are reported, confirming the superior characteristics observed through simulations. Current saturation control was observed by varying the diode knee voltage. The DC-EST with diode diverter is shown to have a square FBSOA. The saturation current density was lowered by a factor of 1.5×, which is desirable to achieve good short circuit SOA (SCSOA). The diode diverter concept is shown to be especially advantageous in the high voltage (4 kV) regime
  • Keywords
    MOS-controlled thyristors; cathodes; current density; power semiconductor diodes; semiconductor device models; semiconductor device testing; 4 kV; DC-EST; DC-EST structure; FBSOA; P-base region; current density; current saturation characteristics; current saturation control; diode diverter; diode knee voltage; emitter-switched thyristor structure; floating P-base DC-EST operation; forward bias SOA; forward voltage drop; high voltage regime; hole current; numerical simulations; on-state voltage drop; parasitic thyristor latch-up susceptibility; saturation current density; short circuit SOA; square FBSOA; wide SOA; Cathodes; Circuit simulation; Current density; Diodes; Low voltage; Numerical simulation; Physics; Semiconductor optical amplifiers; Thyristors; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on
  • Conference_Location
    Toronto, Ont.
  • ISSN
    1063-6854
  • Print_ISBN
    0-7803-5290-4
  • Type

    conf

  • DOI
    10.1109/ISPSD.1999.764090
  • Filename
    764090