Title :
A novel IGBT chip design concept of high turn-off current capability and high short circuit capability for 2.5 kV power pack IGBT
Author :
Yoshikawa, Koh ; Koga, Takeharu ; Fujii, Takeshi ; Katoh, Tsutomu ; Takahashi, Yoshikazu ; Seki, Yasukazu
Author_Institution :
Fuji Electr. Corp. Res. & Dev. Ltd., Matsumoto, Japan
Abstract :
A novel concept for achieving high electrical withstand capability on a high power IGBT is discussed in this paper. It should be noted that high turn-off capability of 6600 amperes (at peak collector voltage=2500 V, Tj=125°C) and the short circuit capability of over 50 μs (at VCC=1600 V, Tj=125°C) are successfully attained by a newly developed power pack IGBT. In this paper, simulation results based upon the novel design concept are presented. Furthermore, experimental results are demonstrated to corroborate the simulation results
Keywords :
electric current; insulated gate bipolar transistors; power bipolar transistors; semiconductor device models; semiconductor device packaging; semiconductor device testing; 125 C; 1600 V; 2500 V; 50 mus; 6600 A; IGBT chip design; electrical withstand capability; junction temperature; peak collector voltage; power IGBT; power pack IGBT; short circuit capability; simulation; turn-off current capability; Chip scale packaging; Circuits; Current density; Electrodes; Insulated gate bipolar transistors; Latches; Semiconductor device measurement; Voltage measurement;
Conference_Titel :
Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on
Conference_Location :
Toronto, Ont.
Print_ISBN :
0-7803-5290-4
DOI :
10.1109/ISPSD.1999.764091
