A novel IGBT chip design concept of high turn-off current capability and high short circuit capability for 2.5 kV power pack IGBT

Author

Yoshikawa, Koh ; Koga, Takeharu ; Fujii, Takeshi ; Katoh, Tsutomu ; Takahashi, Yoshikazu ; Seki, Yasukazu

Author_Institution

Fuji Electr. Corp. Res. & Dev. Ltd., Matsumoto, Japan

fYear

1999

fDate

1999

Firstpage

177

Lastpage

180

Abstract

A novel concept for achieving high electrical withstand capability on a high power IGBT is discussed in this paper. It should be noted that high turn-off capability of 6600 amperes (at peak collector voltage=2500 V, T_j=125°C) and the short circuit capability of over 50 μs (at V_CC=1600 V, T_j=125°C) are successfully attained by a newly developed power pack IGBT. In this paper, simulation results based upon the novel design concept are presented. Furthermore, experimental results are demonstrated to corroborate the simulation results

Keywords

electric current; insulated gate bipolar transistors; power bipolar transistors; semiconductor device models; semiconductor device packaging; semiconductor device testing; 125 C; 1600 V; 2500 V; 50 mus; 6600 A; IGBT chip design; electrical withstand capability; junction temperature; peak collector voltage; power IGBT; power pack IGBT; short circuit capability; simulation; turn-off current capability; Chip scale packaging; Circuits; Current density; Electrodes; Insulated gate bipolar transistors; Latches; Semiconductor device measurement; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on

Conference_Location

Toronto, Ont.

ISSN

1063-6854

Print_ISBN

0-7803-5290-4

Type

conf

DOI

10.1109/ISPSD.1999.764091

Filename

764091