Title :
[Copyright notice]
Abstract :
The following topics are dealt with: Moore devices; reliability; SRAM and DRAM; alternative FETs; SOI MOSFETs; ferromagnetic and polycrystalline devices; simulation of advanced silicon devices; photodetectors; gallium nitride power devices; modeling of temperature and stress impacts; phase change memories; leakage current and traps; tunneling FET devices; nanowire transistors; device steep slop and leakage; channel and gate stack engineering; simulation of III/V devices; charge trap NAND flash; and electromechanical devices.
Keywords :
random-access storage; semiconductor devices; DRAM; III/V devices; Moore devices; SOI MOSFET; SRAM; alternative FET; channel engineering; charge trap NAND flash; device leakage; device steep slop; electromechanical devices; ferromagnetic devices; gallium nitride power devices; gate stack engineering; leakage current; leakage traps; nanowire transistors; phase change memories; photodetectors; polycrystalline devices; reliability; silicon devices; stress impact; temperature impact; tunneling FET devices;
Conference_Titel :
Solid-State Device Research Conference (ESSDERC), 2010 Proceedings of the European
Conference_Location :
Sevilla
Print_ISBN :
978-1-4244-6658-0
DOI :
10.1109/ESSDERC.2010.5617754
