DocumentCode
2793665
Title
[Copyright notice]
fYear
2010
fDate
14-16 Sept. 2010
Firstpage
1
Lastpage
1
Abstract
The following topics are dealt with: Moore devices; reliability; SRAM and DRAM; alternative FETs; SOI MOSFETs; ferromagnetic and polycrystalline devices; simulation of advanced silicon devices; photodetectors; gallium nitride power devices; modeling of temperature and stress impacts; phase change memories; leakage current and traps; tunneling FET devices; nanowire transistors; device steep slop and leakage; channel and gate stack engineering; simulation of III/V devices; charge trap NAND flash; and electromechanical devices.
Keywords
random-access storage; semiconductor devices; DRAM; III/V devices; Moore devices; SOI MOSFET; SRAM; alternative FET; channel engineering; charge trap NAND flash; device leakage; device steep slop; electromechanical devices; ferromagnetic devices; gallium nitride power devices; gate stack engineering; leakage current; leakage traps; nanowire transistors; phase change memories; photodetectors; polycrystalline devices; reliability; silicon devices; stress impact; temperature impact; tunneling FET devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference (ESSDERC), 2010 Proceedings of the European
Conference_Location
Sevilla
ISSN
1930-8876
Print_ISBN
978-1-4244-6658-0
Type
conf
DOI
10.1109/ESSDERC.2010.5617754
Filename
5617754
Link To Document