Title :
MOS bipolar gate IGBT operation
Author :
Bobde, M.D. ; Minato, T. ; Thapar, N. ; Baliga, B.J.
Author_Institution :
Power Semicond. Res. Center, North Carolina State Univ., Raleigh, NC, USA
Abstract :
A new IGBT with a P+ diverter which is connected to the gate through a series resistance, is proposed in this paper. It was observed from simulations that providing a small current through the diverter resulted in a significant decrease in the device on-state voltage drop. Measurements on fabricated 4 kV IGBTs showed a forward voltage drop of 2.78 V (at collector current density of 100 A/cm2 ) for diverter current of 10 mA (7.38 A/cm2), as compared to 3.09 V of the conventional IGBT (without a diverter). After electron irradiation, the devices had a forward voltage drop of 5.02 V (at collector current density of 50 A/cm2) for the same diverter current, as compared to 6.48 V for the conventional IGBTs. Furthermore, both the devices had nearly identical turn off time, and excellent latch-up current density
Keywords :
current density; electric resistance; electron beam effects; insulated gate bipolar transistors; power bipolar transistors; semiconductor device measurement; semiconductor device models; 10 mA; 2.78 V; 3.09 V; 4 kV; 5.02 V; 6.48 V; IGBT; IGBT measurements; IGBTs; MOS bipolar gate IGBT; P+ diverter; collector current density; device on-state voltage drop; diverter current; electron irradiation; forward voltage drop; latch-up current density; series resistance; simulation; turn off time; Current density; Current measurement; Density measurement; Doping; Electrical resistance measurement; Electrodes; Electrons; Insulated gate bipolar transistors; Joining processes; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on
Conference_Location :
Toronto, Ont.
Print_ISBN :
0-7803-5290-4
DOI :
10.1109/ISPSD.1999.764092
