Title :
Characterization of silicon direct bonding methodology for high performance IGBT
Author :
Kim, Tae Hoon ; Yun, Chong Man ; Kim, So0 Seong ; Jang, Hyung Woo
Author_Institution :
Fairchild Korea Semicond. Ltd., Kyunggi-Do, South Korea
Abstract :
Silicon direct bonding methods for 1200 V IGBTs are introduced and their effects on the device characteristics are discussed. Device characteristics of SDB IGBTs are mainly determined by the ion implantation, oxide etching and cleaning conditions. A 1200 V punchthrough (PT) IGBT fabricated using this bonding methodology exhibits Vce,sat of 2.5 V, Eoff of 30 uJ/A and short-circuit withstanding time of 50 μs
Keywords :
elemental semiconductors; etching; insulated gate bipolar transistors; ion implantation; power bipolar transistors; semiconductor device measurement; semiconductor device reliability; silicon; surface cleaning; wafer bonding; 1200 V; 2.5 V; 50 mus; IGBT; IGBTs; SDB IGBTs; Si; Si direct bonding methods; bonding methodology; cleaning conditions; device characteristics; ion implantation; oxide etching; punchthrough IGBT; short-circuit withstanding time; silicon direct bonding methodology; Annealing; Bonding processes; Buffer layers; Diffusion bonding; Doping; Insulated gate bipolar transistors; Ion implantation; Silicon; Surface cleaning; Wafer bonding;
Conference_Titel :
Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on
Conference_Location :
Toronto, Ont.
Print_ISBN :
0-7803-5290-4
DOI :
10.1109/ISPSD.1999.764093
