An improved power MOSFET using a novel split well structure

Author

Zeng, Jun ; Wheatley, C. Frank

Author_Institution

Semicond. Sector, Harris Corp., Mountaintop, PA, USA

fYear

1999

fDate

1999

Firstpage

205

Lastpage

208

Abstract

The design trade-offs between the specific on-resistance (R_sp), the ruggedness and the reverse recovery charge (Q_rr) of the body-diode for vertical power MOSFETs has been significantly improved by using a novel split-well (SW) concept. The implementation of the SW structure is straightforward with low cost. It is expected that the source exclusion mask can be removed. When compared to a conventional VDMOST with the same design rules, the SW device provides 15% lower R_sp and 10% lower Q_rr without degradation of device ruggedness. In addition, it is expected that the SW device will yield higher hot-carrier reliability

Keywords

electric charge; electric resistance; hot carriers; masks; power MOSFET; semiconductor device measurement; semiconductor device reliability; SW device; SW structure; VDMOST; body-diode; design rules; design trade-offs; device ruggedness; hot-carrier reliability; power MOSFET; reverse recovery charge; source exclusion mask; specific on-resistance; split well structure; vertical power MOSFETs; Annealing; Avalanche breakdown; Current density; Electric breakdown; Immune system; Implants; Leakage current; MOSFET circuits; Power MOSFET; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on

Conference_Location

Toronto, Ont.

ISSN

1063-6854

Print_ISBN

0-7803-5290-4

Type

conf

DOI

10.1109/ISPSD.1999.764098

Filename

764098