Title :
A new model for dopant redistribution in a power SOI structure
Author :
Ishiyama, Toshihiko ; Matsumoto, Satoshi ; Yachi, Toshiaki ; Fichtner, Wolfgang
Author_Institution :
NTT Telecommun. Energy Labs., Musashino, Japan
Abstract :
We propose an interlayer model of the SOI structure during annealing, that explains the phosphorus pile-up and boron segregation that occurs in the SOI structure. Simulated dopant profiles based on the model showed its usefulness in predicting the electrical characteristics of SOI power devices
Keywords :
annealing; doping profiles; power MOSFET; segregation; semiconductor device models; semiconductor process modelling; silicon-on-insulator; SOI power devices; SOI structure; Si:P,B-SiO2; annealing; boron segregation; dopant redistribution model; electrical characteristics; interlayer model; phosphorus pile-up; power MOSFETs; power SOI structure; simulated dopant profiles; Annealing; Atomic layer deposition; Boron; Electric variables; Power system modeling; Predictive models; Semiconductor process modeling; Temperature; Thin film devices; Threshold voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on
Conference_Location :
Toronto, Ont.
Print_ISBN :
0-7803-5290-4
DOI :
10.1109/ISPSD.1999.764102
