• DocumentCode
    2793823
  • Title

    A new model for dopant redistribution in a power SOI structure

  • Author

    Ishiyama, Toshihiko ; Matsumoto, Satoshi ; Yachi, Toshiaki ; Fichtner, Wolfgang

  • Author_Institution
    NTT Telecommun. Energy Labs., Musashino, Japan
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    217
  • Lastpage
    220
  • Abstract
    We propose an interlayer model of the SOI structure during annealing, that explains the phosphorus pile-up and boron segregation that occurs in the SOI structure. Simulated dopant profiles based on the model showed its usefulness in predicting the electrical characteristics of SOI power devices
  • Keywords
    annealing; doping profiles; power MOSFET; segregation; semiconductor device models; semiconductor process modelling; silicon-on-insulator; SOI power devices; SOI structure; Si:P,B-SiO2; annealing; boron segregation; dopant redistribution model; electrical characteristics; interlayer model; phosphorus pile-up; power MOSFETs; power SOI structure; simulated dopant profiles; Annealing; Atomic layer deposition; Boron; Electric variables; Power system modeling; Predictive models; Semiconductor process modeling; Temperature; Thin film devices; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on
  • Conference_Location
    Toronto, Ont.
  • ISSN
    1063-6854
  • Print_ISBN
    0-7803-5290-4
  • Type

    conf

  • DOI
    10.1109/ISPSD.1999.764102
  • Filename
    764102
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2793823