RF LDMOSFET with graded gate structure

Author

Shuming, Xu ; Dow, Foo Pan

Author_Institution

Inst. of Microelectron., Singapore

fYear

1999

fDate

1999

Firstpage

221

Lastpage

224

Abstract

This paper describes a new RF LDMOS with a graded structure. It enables a very thin gate oxide to be used in the channel region to achieve high transconductance, but at the gate edges, the polysilicon is lifted off to more than 3 times that thickness, and thus the parasitic capacitance values C_gd and C_gs are significantly reduced. This improves the RF output power, gain and the cut-off frequency. Due to the release of the electric field in the gate edge, a sufficiently high breakdown voltage can be realized with very thin gate oxide

Keywords

MOSFET; capacitance; dielectric thin films; electric fields; microwave field effect transistors; semiconductor device breakdown; semiconductor device testing; RF LDMOSFET; RF output power; SiO₂-Si; breakdown voltage; cut-off frequency; gain; gate edge electric field; gate edge polysilicon lift-off; graded gate structure; graded structure; parasitic capacitance; thin channel region gate oxide; transconductance; Cutoff frequency; Lead compounds; Microelectronics; Oxidation; Parasitic capacitance; Power generation; Radio frequency; Silicon; Temperature; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on

Conference_Location

Toronto, Ont.

ISSN

1063-6854

Print_ISBN

0-7803-5290-4

Type

conf

DOI

10.1109/ISPSD.1999.764103

Filename

764103