Title :
High-performance 13-65 V rated LDMOS transistors in an advanced smart power technology
Author :
Merchant, S. ; Baird, R. ; Chang, S. ; Hui, P. ; Macary, V. ; Neaves, M.G.
Author_Institution :
Motorola SPS Transp. Syst. Group, Mesa, AZ, USA
Abstract :
A high-performance, low cost smart power technology targeting automotive applications in the 13-65 V range is described. The trade-off between on-state specific resistance and off-state breakdown voltage is detailed for four lateral double-diffused MOS structures. The characterization includes the effects of gate length and drift length, and scaling issues related to interconnect metal debiasing. Results compare favorably with competing technologies of higher cost and complexity
Keywords :
MOS integrated circuits; automotive electronics; electric resistance; integrated circuit interconnections; integrated circuit metallisation; power MOSFET; power integrated circuits; semiconductor device breakdown; 13 to 65 V; LDMOS transistors; automotive applications; drift length; gate length; interconnect metal debiasing; lateral double-diffused MOS structures; off-state breakdown voltage; on-state specific resistance; scaling; smart power technology; voltage rating; Automotive engineering; Breakdown voltage; Costs; Fuels; Integrated circuit interconnections; Integrated circuit technology; Power integrated circuits; Transistors; Transportation; Voltage measurement;
Conference_Titel :
Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on
Conference_Location :
Toronto, Ont.
Print_ISBN :
0-7803-5290-4
DOI :
10.1109/ISPSD.1999.764104
