The maximum controllable current of improved base resistance controlled thyristor employing a self-aligned corrugated p-base

We report an improved corrugated p-base base-resistance-controlled thyristor (CB-BRT) employing a reduced width n⁺ cathode and increased length finger gate in order to increase the MCC (maximum controllable current) and to suppress snap-back effectively. The MCC of the CB-BRT is increased considerably by the increased MOS channel density and the suppressed regenerative thyristor action. Experimental results show that the maximum controllable currents of the CB-BRT and the conventional BRT are 977 A/cm² and 687 A/cm², respectively, for a ramped turn-off gate voltage of -10 V and a p-base implantation dose of 6×10¹³ cm^-2