The maximum controllable current of improved base resistance controlled thyristor employing a self-aligned corrugated p-base

Author

Byeon, Dae-Seok ; Lee, You-Sang ; Lee, Won-Oh ; Han, Min-Koo ; Choi, Yearn-Ik

Author_Institution

Sch. of Electr. Eng., Seoul Nat. Univ., South Korea

fYear

1999

fDate

1999

Firstpage

229

Lastpage

232

Abstract

We report an improved corrugated p-base base-resistance-controlled thyristor (CB-BRT) employing a reduced width n⁺ cathode and increased length finger gate in order to increase the MCC (maximum controllable current) and to suppress snap-back effectively. The MCC of the CB-BRT is increased considerably by the increased MOS channel density and the suppressed regenerative thyristor action. Experimental results show that the maximum controllable currents of the CB-BRT and the conventional BRT are 977 A/cm² and 687 A/cm², respectively, for a ramped turn-off gate voltage of -10 V and a p-base implantation dose of 6×10¹³ cm^-2

Keywords

MOS-controlled thyristors; cathodes; doping profiles; electric current; ion implantation; semiconductor device testing; -10 V; CB-BRT; MCC; MOS channel density; base resistance controlled thyristor; corrugated p-base base-resistance-controlled thyristor; finger gate length; maximum controllable current; p-base implantation dose; ramped turn-off gate voltage; reduced width n⁺ cathode; self-aligned corrugated p-base; snap-back suppression; suppressed regenerative thyristor action; Anodes; Cathodes; Conductivity; Degradation; Doping; Fabrication; Fingers; Q measurement; Threshold voltage; Thyristors;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on

Conference_Location

Toronto, Ont.

ISSN

1063-6854

Print_ISBN

0-7803-5290-4

Type

conf

DOI

10.1109/ISPSD.1999.764105

Filename

764105