Title :
Industrial relevance of deep junctions produced by rapid thermal processing for power integrated circuits
Author :
Dilhac, J.-M. ; Cornibert, L. ; Morillon, B. ; Roux, S. ; Ganibal, C.
Author_Institution :
Lab. d´´Autom. et d´´Anal. des Syst., CNRS, Toulouse, France
Abstract :
An alternative method for creating total vertical junction insulation for power devices is presented. It involves the thermomigration of molten Al/Si. First, the method is theoretically detailed. A full description of the equipment required for this task is then given with special emphasis on the specific characteristics needed. Physical and electrical results are briefly discussed, showing the efficiency of the method in terms of surface consumption and voltage handling capability. Finally, application of thermomigration to a manufacturing environment is considered
Keywords :
integrated circuit manufacture; integrated circuit technology; power integrated circuits; rapid thermal processing; surface chemistry; zone melting; AlSi; deep junctions; manufacturing environment; molten Al/Si; power devices; power integrated circuits; rapid thermal processing; surface consumption; temperature gradient zone melting; thermomigration; total vertical junction insulation; voltage handling capability; Annealing; Cooling; Furnaces; Heat sinks; Lamps; Rapid thermal processing; Silicon carbide; Temperature control; Thermal conductivity; Water heating;
Conference_Titel :
Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on
Conference_Location :
Toronto, Ont.
Print_ISBN :
0-7803-5290-4
DOI :
10.1109/ISPSD.1999.764107