Title :
Reliability-cost models for the power switching devices of wind power converters
Author :
Ma, K. ; Blaabjerg, Frede
Author_Institution :
Dept. of Energy Technol., Aalborg Univ., Aalborg, Denmark
Abstract :
In order to satisfy the growing reliability requirements for the wind power converters with more cost-effective solution, the target of this paper is to establish a new reliability-cost model which can connect the relationship between reliability performances and corresponding semiconductor cost for power switching devices. First the conduction loss, switching loss as well as thermal impedance models of power switching devices (IGBT module) are related to the semiconductor chip number information respectively. Afterwards simplified analytical solutions, which can directly extract the junction temperature mean value Tm and fluctuation amplitude ΔTj of power devices, are presented. With the proposed reliability-cost model, it is possible to enable future reliability-oriented design of the power switching devices for wind power converters, and also an evaluation benchmark for different wind power converter configurations is opened.
Keywords :
insulated gate bipolar transistors; power convertors; power generation reliability; wind power plants; IGBT module; cost-effective solution; fluctuation amplitude; power devices; power switching devices; reliability performances; reliability requirements; reliability-cost model; reliability-cost models; reliability-oriented design; semiconductor chip number information; semiconductor cost; switching loss; thermal impedance models; wind power converter configurations; Insulated gate bipolar transistors; Junctions; Reliability; Switches; Switching loss; Thermal resistance; Wind power generation;
Conference_Titel :
Power Electronics for Distributed Generation Systems (PEDG), 2012 3rd IEEE International Symposium on
Conference_Location :
Aalborg
Print_ISBN :
978-1-4673-2021-4
Electronic_ISBN :
978-1-4673-2022-1
DOI :
10.1109/PEDG.2012.6254096