Abstract :
The following topics are dealt with: future directions for non-volatile memory technology; phase-change random access memory; binary oxide resistive memories; flash memories such as twin-flash memory, NAND-type SONOS flash memory, floating gate NOR flash memory, and EEPROM; CMOS circuit design for non-volatile resistive memory; CMOS circuits for the next generation of non-volatile memory technology; relaxor ferroelectrics, ferroelectric capacitor memory, and MRAM; and nanoelectronic memories.
Keywords :
CMOS memory circuits; NAND circuits; NOR circuits; ferroelectric storage; flash memories; integrated circuit design; logic design; magnetic storage; nanoelectronics; phase change materials; random-access storage; relaxor ferroelectrics; CMOS circuit design; EEPROM; MRAM; NAND-type SONOS flash memory; binary oxide resistive memory; ferroelectric capacitor memory; floating gate NOR flash memory; nanoelectronic memory; nonvolatile memory technology; phase-change random access memory; relaxor ferroelectrics; twin flash;
