Title :
Visualization Using the Scanning Nonlinear Dielectric Microscopy of Electrons and Holes Localized in the Thin Gate Film of Metal-Oxide-Nitride-Oxide-Semiconductor Type Flash Memory
Author :
Honda, Koichiro ; Cho, Yasuo
Author_Institution :
Memory Device Lab., Fujitsu Labs. Ltd., Atsugi
Abstract :
By applying scanning nonlinear dielectric microscopy (SNDM), we identified the position of electrons/holes existing in the gate SiO2-Si3N4-SiO2 (ONO) film of the Metal-Oxide-Nitride-Oxide-Semiconductor (MONOS) type flash memory. The electrons were detected in the Si3N4 part of the ONO film. The holes, on the other hand, were found in the Si3N4 film as well as in the bottom SiO2 film. Additionally, we succeeded in detecting the electrons existed in the poly-Si layer of the floating gate of flash memory.
Keywords :
MIS devices; flash memories; scanning electron microscopy; silicon compounds; thin films; MONOS; SiO2-Si3N4-SiO2; floating gate; metal-oxide-nitride-oxide-semiconductor type flash; scanning nonlinear dielectric microscopy; thin gate film; Capacitance; Charge carrier processes; Dielectric constant; Dielectric devices; Dielectric thin films; Flash memory; MONOS devices; Nonvolatile memory; Scanning electron microscopy; Visualization;
Conference_Titel :
Non-Volatile Memory Technology Symposium, 2006. NVMTS 2006. 7th Annual
Conference_Location :
San Mateo, CA
Print_ISBN :
0-7803-9738-X
DOI :
10.1109/NVMT.2006.378866
