Limitation of the output power of the quantum-well laser diodes under short-pulsed electrical pumping

Author

Sokolovskii, G.S. ; Deryagin, A.G. ; Dudelev, V.V. ; Kuchinskii, V.I. ; Losev, S.N. ; Lyutetskiy, A.V. ; Pikhtin, N.A. ; Slipchenko, S.O. ; Sokolova, Z.N. ; Tarasov, I.S. ; Vinokurov, D.A.

Author_Institution

Ioffe Physico-Tech. Inst., St. Petersburg, Russia

fYear

2009

fDate

14-19 June 2009

Firstpage

1

Lastpage

1

Abstract

In this report, we present experimental study of spectrally-resolved dynamics of InGaAs/GaAs/AlGaAs QW laser diodes emitting through multiple electron and hole quantum levels. 4 mm-long lasers with 7 mum stripes were pumped with short 150 ns electrical pulses with low 16 kHz repetition rate in order to avoid overheating. This has allowed to apply pumping current amplitudes up to 10 A, to the level of hundreds of thresholds.

Keywords

III-V semiconductors; aluminium compounds; electro-optical effects; gallium arsenide; indium compounds; laser beams; quantum well lasers; InGaAs-GaAs-AlGaAs; electrical pulses; hole quantum levels; multiple electron levels; quantum-well laser diodes; short-pulsed electrical pumping; size 4 mm; size 7 mum; spectrally-resolved dynamics; time 150 ns; Charge carrier processes; Diode lasers; Electron emission; Gallium arsenide; Indium gallium arsenide; Laser excitation; Optical pulses; Power generation; Pump lasers; Quantum well lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009. European Conference on

Conference_Location

Munich

Print_ISBN

978-1-4244-4079-5

Electronic_ISBN

978-1-4244-4080-1

Type

conf

DOI

10.1109/CLEOE-EQEC.2009.5192509

Filename

5192509