SOI high voltage integrated circuit technology for plasma display panel drivers

Author

Lee, M.R. ; Kwon, Oh-Kyong ; Lee, S.S. ; Lee, I.H. ; Yang, I.S. ; Paek, J.H. ; Hwang, L.Y. ; Ju, J.I. ; Lee, B.H. ; Chang-jae Lee

Author_Institution

Div. of Electron. & Electr. Eng., Hanyang Univ., Seoul, South Korea

fYear

1999

fDate

1999

Firstpage

285

Lastpage

288

Abstract

We have developed 150 V and 250 V high voltage integrated circuit technologies using high performance extended drain MOSFET (EDMOSFET) and dielectric isolation (DI) technology for data and scan driving LSIs of color AC plasma display panel systems for an application of HDTV. The EDMOSFETs have invariant channel length despite process variation because of a self-aligned structure. This results in smaller chip area for the developed driver LSIs than that of conventional driver LSIs using LDMOSFETs. The data driver LSI with maximum driving current of 50 mA and 60 output channels can be applied to PDP systems with a fast addressing time of 0.7 μs. The scan driver LSI for large-size AC PDPs has a maximum driving current of 500 mA for both the source and the sink

Keywords

MOS integrated circuits; colour displays; dielectric thin films; driver circuits; electric current; high definition television; isolation technology; large scale integration; plasma displays; power MOSFET; power integrated circuits; silicon-on-insulator; 0.7 mus; 150 V; 250 V; 50 mA; 500 mA; DI technology; EDMOSFET; HDTV application; PDP systems; SOI high voltage integrated circuit technology; Si-SiO₂; addressing time; chip area; color AC plasma display panel systems; data driving LSIs; dielectric isolation technology; driver LSIs; extended drain MOSFET; high voltage integrated circuit technology; invariant channel length; large-size AC PDPs; maximum driving current; output channels; plasma display panel drivers; process variation; scan driver LSI; scan driving LSIs; self-aligned structure; CMOS process; CMOS technology; Driver circuits; HDTV; Integrated circuit technology; Isolation technology; Large scale integration; Metallization; Plasma displays; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on

Conference_Location

Toronto, Ont.

ISSN

1063-6854

Print_ISBN

0-7803-5290-4

Type

conf

DOI

10.1109/ISPSD.1999.764118

Filename

764118