• DocumentCode
    2794130
  • Title

    High voltage high frequency silicon bipolar transistors

  • Author

    Gradinaru, D. ; Ng, W.T. ; Salama, C.A.T.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    293
  • Lastpage
    296
  • Abstract
    In this paper, a novel design concept for a high voltage RF silicon BJT structure is introduced. Closely spaced p+ base contact diffusions are used to guard the thin base region, allowing independent tailoring of the breakdown voltage and high frequency performance
  • Keywords
    diffusion; elemental semiconductors; microwave bipolar transistors; power bipolar transistors; semiconductor device breakdown; semiconductor device measurement; silicon; Si; breakdown voltage; design concept; high frequency performance; high voltage RF silicon BJT structure; high voltage high frequency silicon bipolar transistors; p+ base contact diffusions; thin base region; Bipolar transistors; Breakdown voltage; Contacts; Design engineering; Doping; Electric breakdown; Fingers; Medical simulation; Radio frequency; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on
  • Conference_Location
    Toronto, Ont.
  • ISSN
    1063-6854
  • Print_ISBN
    0-7803-5290-4
  • Type

    conf

  • DOI
    10.1109/ISPSD.1999.764120
  • Filename
    764120
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2794130