• DocumentCode
    2794167
  • Title

    Ultra-low Rdson 12 V P-channel trench MOSFET

  • Author

    Kinzer, D. ; Asselanis, D. ; Carta, R.

  • Author_Institution
    Int. Rectifier Corp., El Segundo, CA, USA
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    303
  • Lastpage
    306
  • Abstract
    This paper describes a high density trench P-channel MOSFET for portable applications. These FETs are required to have extremely low R dson with gate drives limited by single cell Li-ion battery voltage as low as 2.5 V. This 12 V FET in an SO8 package measures only 5 mΩ at 4.5 Vgs, and 7 mΩ at 2.5 Vgs. Eliminating package and top metal resistance, this corresponds to a specific Rdson of 21.6 and 37.0 mΩ-mm2, respectively. Typical applications for these devices include battery charging and load switching in cell phones and laptops
  • Keywords
    electric resistance; isolation technology; power MOSFET; semiconductor device metallisation; semiconductor device packaging; 12 V; 2.5 V; 45 V; 5 mohm; 7 mohm; Li; P-channel trench MOSFET; SO8 package; battery charging; cell phones; drain-source on-resistance; gate drives; high density trench P-channel MOSFET; laptops; load switching; package resistance; portable applications; single cell Li-ion battery voltage; specific on-resistance; top metal resistance; Batteries; Conductivity; Doping; Etching; FETs; Immune system; Low voltage; MOSFET circuits; Semiconductor device packaging; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on
  • Conference_Location
    Toronto, Ont.
  • ISSN
    1063-6854
  • Print_ISBN
    0-7803-5290-4
  • Type

    conf

  • DOI
    10.1109/ISPSD.1999.764122
  • Filename
    764122
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2794167