DocumentCode
2794180
Title
High-density ultra-low Rdson 30 volt N-channel trench FETs for DC/DC converter applications
Author
Sodhi, Ritu ; Malik, Rajeev ; Asselanis ; Kinzer, Dan
Author_Institution
Int. Rectifier Corp., El Segundo, CA, USA
fYear
1999
fDate
1999
Firstpage
307
Lastpage
310
Abstract
This paper presents a new high-density trench MOSFET design with ultra-low Rdson for DC/DC converter applications. A benchmark low specific on-resistance of 26 mΩ.mm2 at 4.5 V gate bias is reported. A remote contact feature is utilized to obtain such high channel density and corresponding channel conductance. In-circuit efficiency as high as 89% is obtained, which is the best obtained in the industry to date
Keywords
DC-DC power convertors; electric admittance; electric resistance; electrical contacts; power MOSFET; semiconductor device breakdown; 30 V; 4.5 V; 89 percent; DC/DC converter applications; N-channel trench FETs; benchmark specific on-resistance; breakdown voltage; channel conductance; channel density; gate bias; high-density trench MOSFET design; in-circuit efficiency; remote contact feature; ultra-low drain-source on-resistance; Consumer electronics; DC-DC power converters; Electrodes; Etching; FETs; MOSFETs; Microcomputers; Microprocessors; Positron emission tomography; Process design;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on
Conference_Location
Toronto, Ont.
ISSN
1063-6854
Print_ISBN
0-7803-5290-4
Type
conf
DOI
10.1109/ISPSD.1999.764123
Filename
764123
Link To Document