• DocumentCode
    2794231
  • Title

    Thermal- and radiation-induced interface traps in MOS devices

  • Author

    Sogoyan, A.V. ; Cherepko, S.V. ; Pershenkov, V.S. ; Rogov, V.I. ; Ulimov, V.N. ; Emelianov, V.V.

  • Author_Institution
    Specialized Electron. Syst., Moscow, Russia
  • fYear
    1997
  • fDate
    15-19 Sep 1997
  • Firstpage
    69
  • Lastpage
    72
  • Abstract
    The interface trap build-up mechanisms during post-irradiation thermal annealing and radiation-induced charge neutralisation (RICN) are experimentally investigated. The role of substrate electrons is shown to be significant in post-irradiation interface trap build-up. The RICN is found to be incapable to replace a standard thermal annealing test in terms of conservative low dose rate response estimation
  • Keywords
    MOSFET; X-ray effects; annealing; interface states; MOSFET; interface trap build-up; low dose rate response; post-irradiation thermal annealing; radiation-induced charge neutralisation; substrate electrons; Annealing; Electron traps; Hydrogen; Instruments; Laboratories; MOS devices; Physics; Space charge; Space heating; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation and Its Effects on Components and Systems, 1997. RADECS 97. Fourth European Conference on
  • Conference_Location
    Cannes
  • Print_ISBN
    0-7803-4071-X
  • Type

    conf

  • DOI
    10.1109/RADECS.1997.698848
  • Filename
    698848
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2794231