Title :
A new high energy implantation based technology for power integrated circuit devices
Author :
Patti, Davide ; Franzò, Giorgia ; Privitera, Vittorio ; Priolo, Francesco
Author_Institution :
STMicroelectronics, Catania, Italy
Abstract :
In this work, a significant improvement of power integrated circuit technology has been obtained by the use of high energy implantation, thus eliminating a second epitaxial growth. The damage in implanted region has been recovered by rapid thermal annealing
Keywords :
doping profiles; integrated circuit yield; ion implantation; power integrated circuits; rapid thermal annealing; high energy implantation; high energy implantation based technology; implanted region damage recovery; power integrated circuit devices; power integrated circuit technology; rapid thermal annealing; second epitaxial growth elimination; Bipolar transistors; Dielectrics and electrical insulation; Epitaxial growth; Epitaxial layers; Fabrication; Implants; Integrated circuit technology; Ion implantation; Power integrated circuits; Substrates;
Conference_Titel :
Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on
Conference_Location :
Toronto, Ont.
Print_ISBN :
0-7803-5290-4
DOI :
10.1109/ISPSD.1999.764127
