Title :
Monolithically integrated power device consisting of a GAT and a MPS diode with increased switching speed
Author :
Cheng, Xu ; Kang, Baowei ; Sin, Johnny K O ; Wang, Zhe ; Li, GuoZhong ; Wu, Yu
Author_Institution :
Dept. of Electron. Eng., Beijing Polytech. Univ., China
Abstract :
A new integrated power device structure, which puts together a gate associated transistor (GAT) and a merged pin Schottky (MPS) diode, is proposed. It is verified by simulations and experiments that the new structure has gained both the faster recovery speed of the diode and the faster switching speed of the transistor compared to that of the conventional structure consisting of a traditional power bipolar junction transistor (BJT) and a p-i-n diode. The new structure can be realized in an ordinary planar process, and the fast switching speed can be achieved at low cost without the need for special carrier-lifetime-controlling techniques such as Pt doping
Keywords :
Schottky diodes; power bipolar transistors; power semiconductor diodes; power semiconductor switches; semiconductor device models; semiconductor device testing; GAT; MPS diode; Pt doping; carrier-lifetime-controlling techniques; diode recovery speed; gate associated transistor; integrated power device structure; merged pin Schottky diode; monolithically integrated power device; p-i-n diode; planar process; power BJT; power bipolar junction transistor; simulation; switching speed; transistor switching speed; Costs; Equivalent circuits; Low voltage; PROM; Power engineering and energy; Power semiconductor switches; Production; Schottky diodes; Semiconductor diodes; Silicon compounds;
Conference_Titel :
Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on
Conference_Location :
Toronto, Ont.
Print_ISBN :
0-7803-5290-4
DOI :
10.1109/ISPSD.1999.764131
