New design approach for ultra high power GCT thyristor

Author

Satoh, K. ; Morishita, K. ; Hirano, N. ; Yamamoto, M. ; Kawakami, A.

Author_Institution

Fkuryou Semicon Eng. Corp., Fukuoka City, Japan

fYear

1999

fDate

1999

Firstpage

351

Lastpage

354

Abstract

Turn-off capability is a major concern when designing ultra high power, large size GCTs (gate commutated turn-off thyristors). Unlike small size GCTs, which have a high turn-off capability, conventional large size GCTs have a low turn-off capability that is not proportionate to its high power. With the help of computer simulation and test sample evaluation, we developed a new design approach for ultra high power GCTs with improved turn-off capability. Turn-off simulation suggested that the low turn-off capability of large size GCTs is related to the nonuniformity in the GCT chip design. Optimizing the GCT chip uniformity following our new design approach resulted in large size GCTs with higher turn-off capability when compared with the conventional approach

Keywords

design engineering; optimisation; semiconductor device models; semiconductor device testing; thyristors; GCT chip design; GCT chip design nonuniformity; GCT chip uniformity optimization; computer simulation; design; gate commutated turn-off thyristors; test sample evaluation; turn-off capability; turn-off simulation; ultra high power GCT thyristor; ultra high power GCTs; ultra high power large size GCTs; Cathodes; Charge carrier density; Doping profiles; Electrodes; Inverters; Medical simulation; Power dissipation; Power electronics; Thyristors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on

Conference_Location

Toronto, Ont.

ISSN

1063-6854

Print_ISBN

0-7803-5290-4

Type

conf

DOI

10.1109/ISPSD.1999.764132

Filename

764132