DocumentCode :
2794575
Title :
SiGe HBT Technology for High Speed Integrated Circuits
Author :
Sunderland, D.A. ; AhIgren, D.C. ; Gilbert, M.M. ; Jeng, S.-J. ; Malinowski, J.C. ; Nguyen-Ngoc, D. ; Schonenberg, K.T. ; Stein, K.J. ; Soyuer, M. ; Meyerson, B.S. ; Harame, D.L.
Author_Institution :
IBM Microelectronics Division, Hopewell Junction, NY
fYear :
1995
fDate :
7-9 Aug. 1995
Firstpage :
37
Lastpage :
38
Keywords :
Capacitors; Electron devices; Germanium silicon alloys; Heterojunction bipolar transistors; High speed integrated circuits; Integrated circuit technology; Physics; Resistors; Silicon germanium; Voltage-controlled oscillators;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Flat Panel Display Technology/Technologies for a Global Information Infrastructure/ICs for New Age Lightwave Communications/RF Optoelectronics, 1995 Digest of the LEOS Summer Topical Meetings
Conference_Location :
Keystone, CO, USA
Print_ISBN :
0-7803-2448-X
Type :
conf
DOI :
10.1109/LEOSST.1995.764151
Filename :
764151
Link To Document :
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