DocumentCode :
2794586
Title :
High-Reliability Self-Aligned InGaP/GaAs HBTs for Lightwave Communications
Author :
Fujii, T. ; Takahashi, T. ; Sasa, S. ; Kawano, A. ; lwai, T.
Author_Institution :
Fujitsu Laboratories Ltd., Japan
fYear :
1995
fDate :
7-9 Aug. 1995
Firstpage :
39
Lastpage :
40
Keywords :
Carbon dioxide; Degradation; Gallium arsenide; Heterojunction bipolar transistors; High speed integrated circuits; Laboratories; Space charge; Spontaneous emission; Stress; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Flat Panel Display Technology/Technologies for a Global Information Infrastructure/ICs for New Age Lightwave Communications/RF Optoelectronics, 1995 Digest of the LEOS Summer Topical Meetings
Conference_Location :
Keystone, CO, USA
Print_ISBN :
0-7803-2448-X
Type :
conf
DOI :
10.1109/LEOSST.1995.764152
Filename :
764152
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2794586
بازگشت