DocumentCode :
2794669
Title :
A simple method for measuring voltage dependent capacitance using TDR system
Author :
Ariga, Zen-Nosuke ; Wada, Keiji ; Shimizu, Toshihisa
Author_Institution :
Tokyo Metropolitan Univ., Hachioji, Japan
fYear :
2010
fDate :
12-16 Sept. 2010
Firstpage :
2188
Lastpage :
2193
Abstract :
Measurement of circuit parasitic parameters, and evaluation of equivalent circuit models are needed for a noise analysis or a high-speed operation circuit design of power electronics circuit. Recently, TDR system is known as a technique of circuit parameter measurement. This paper proposes a TDR method for measuring the voltage dependent capacitance of power MOSFETs. This method can measure output capacitance Coss of MOSFETs on any DC bias voltage. In the experiment, Coss of MOSFETs with VPDS = 0 ~ 350 V is presented.
Keywords :
capacitance measurement; power electronics; DC bias voltage; TDR system; circuit parasitic parameter measurement; power MOSFET; power electronics circuit; voltage dependent capacitance measurement; Capacitance; Capacitance measurement; MOSFETs; Oscilloscopes; Power measurement; Semiconductor device measurement; Voltage measurement; Circuit parameter; MOSFET; TDR; equivalent circuit;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Energy Conversion Congress and Exposition (ECCE), 2010 IEEE
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-4244-5286-6
Electronic_ISBN :
978-1-4244-5287-3
Type :
conf
DOI :
10.1109/ECCE.2010.5617815
Filename :
5617815
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2794669
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