• DocumentCode
    2794669
  • Title

    A simple method for measuring voltage dependent capacitance using TDR system

  • Author

    Ariga, Zen-Nosuke ; Wada, Keiji ; Shimizu, Toshihisa

  • Author_Institution
    Tokyo Metropolitan Univ., Hachioji, Japan
  • fYear
    2010
  • fDate
    12-16 Sept. 2010
  • Firstpage
    2188
  • Lastpage
    2193
  • Abstract
    Measurement of circuit parasitic parameters, and evaluation of equivalent circuit models are needed for a noise analysis or a high-speed operation circuit design of power electronics circuit. Recently, TDR system is known as a technique of circuit parameter measurement. This paper proposes a TDR method for measuring the voltage dependent capacitance of power MOSFETs. This method can measure output capacitance Coss of MOSFETs on any DC bias voltage. In the experiment, Coss of MOSFETs with VPDS = 0 ~ 350 V is presented.
  • Keywords
    capacitance measurement; power electronics; DC bias voltage; TDR system; circuit parasitic parameter measurement; power MOSFET; power electronics circuit; voltage dependent capacitance measurement; Capacitance; Capacitance measurement; MOSFETs; Oscilloscopes; Power measurement; Semiconductor device measurement; Voltage measurement; Circuit parameter; MOSFET; TDR; equivalent circuit;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Energy Conversion Congress and Exposition (ECCE), 2010 IEEE
  • Conference_Location
    Atlanta, GA
  • Print_ISBN
    978-1-4244-5286-6
  • Electronic_ISBN
    978-1-4244-5287-3
  • Type

    conf

  • DOI
    10.1109/ECCE.2010.5617815
  • Filename
    5617815
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2794669