DocumentCode :
2794697
Title :
IGBT modules optimized for three level inverters
Author :
Motto, Eric R. ; Donlon, John F.
Author_Institution :
Powerex Inc., Youngwood, PA, USA
fYear :
2010
fDate :
12-16 Sept. 2010
Firstpage :
2194
Lastpage :
2199
Abstract :
This paper will present optimized IGBT module packaging for three level inverters. Modules with nominal ratings ranging from 25 A to 600 A will be proposed. Total losses for a three level inverter using these new modules will be compared to the losses of a conventional two level inverter using newly developed computer simulation tools.
Keywords :
insulated gate bipolar transistors; invertors; packaging; computer simulation tools; current 25 A to 600 A; insulated gate bipolar transistors; optimized IGBT module packaging; three level inverters; Current measurement; Insulated gate bipolar transistors; Inverters; Leg; Semiconductor device measurement; Temperature measurement; Topology; Insulated gate bipolar transistors; Three level inverter;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Energy Conversion Congress and Exposition (ECCE), 2010 IEEE
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-4244-5286-6
Electronic_ISBN :
978-1-4244-5287-3
Type :
conf
DOI :
10.1109/ECCE.2010.5617818
Filename :
5617818
Link To Document :
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