Title :
Composition-dependent properties of MgxZn1−xO films by sputtering
Author :
Li, Hui ; Liu, Shibin ; Xie, Erqing
Author_Institution :
Sch. of Electron. & Inf., Northwestern Polytech. Univ., Xi´´an, China
Abstract :
The properties of MgxZn1-xO films dependent on composition were studied in this paper. The experiment showed that the composition of films prepared by sputtering was affected by ambient condition and annealing temperature. The increasing Mg content was in favor of increasing crystal quality of films, and didn´t change the wurtzite structure of films. The band gap changed between 3.4 and 4.0 eV, which was dependent on Mg content in films and consistent well with the previous reported theory on alloyed films. These results above showed that MgxZn1-xO films by sputtering could be used as barrier layers in ZnO-based heterostructures.
Keywords :
II-VI semiconductors; annealing; crystal structure; energy gap; manganese compounds; semiconductor growth; semiconductor thin films; sputter deposition; wide band gap semiconductors; zinc compounds; Mg content; MgxZn1-xO; ZnO-based heterostructures; annealing temperature; band gap; barrier layers; composition-dependent properties; crystal quality; film composition; sputtering; wurtzite structure; Annealing; Crystals; Films; Lattices; Photonic band gap; Substrates; Zinc oxide; MgxZn1−xO; sputtering; thin films;
Conference_Titel :
Mechanic Automation and Control Engineering (MACE), 2011 Second International Conference on
Conference_Location :
Hohhot
Print_ISBN :
978-1-4244-9436-1
DOI :
10.1109/MACE.2011.5987130
