Title :
The mechanism of dual schottky magnetodiode
Author :
Phetchakul, T. ; Luanatikomkul, W. ; Yamwong, W. ; Poyai, A.
Author_Institution :
Dept. of Electron., King Mongkut´´s Inst. of Technol. Ladkrabang, Bangkok, Thailand
Abstract :
This paper presents the mechanism of dual schottky magnetodiode. The device can operate both in forward and reverse biasing for magnetic field sensor. Two modes of operation show linearity which electron is only type of carrier. In forward bias, the deflected electrons in n-type semiconductor cathode are injected to metal anode. In reverse bias, the electrons from metal anode are injected and continuously deflected in n-type semiconductor cathode. Comparison of two modes at the same current shows the same sensitivity.
Keywords :
Schottky diodes; magnetic field measurement; magnetic sensors; dual-schottky magnetodiode mechanism; forward biasing; magnetic field sensor; metal anode; n-type semiconductor cathode; reverse biasing; Cathodes; Magnetic separation; Magnetic tunneling; Magnetometers; Magnetostriction; Superconducting magnets; Magnetodiode; Schottky Junction; Sentaurus TCAD;
Conference_Titel :
Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology (ECTI-CON), 2012 9th International Conference on
Conference_Location :
Phetchaburi
Print_ISBN :
978-1-4673-2026-9
DOI :
10.1109/ECTICon.2012.6254188
