• DocumentCode
    2795734
  • Title

    Physical characterization of electron trapping in Unibond(R) oxides

  • Author

    Gruber, O. ; Paillet, Ph ; Musseau, O. ; Marcandella, C. ; Aspar, B. ; Auberton-Hervè, A.J.

  • Author_Institution
    CEA, Centre d´´Etudes de Bruyeres-le-Chatel, France
  • fYear
    1997
  • fDate
    15-19 Sep 1997
  • Firstpage
    92
  • Lastpage
    96
  • Abstract
    In this work, we study the trapping properties of Unibond(R) oxides. We measure its radiative response under different irradiation conditions using both point-contact and MOS transistors. The results obtained show both hole and electron trapping, as previously observed in SIMOX. But in the Unibond(R) case, there is a positive shift of the threshold voltage at very high doses. Using a simple model, we explain this shift by considering a second type of electron traps
  • Keywords
    MOSFET; X-ray effects; electron traps; silicon-on-insulator; wafer bonding; SOI; Si-SiO2; Unibond oxide; electron trapping; point contact MOS transistor; radiative response; threshold voltage; Electric variables measurement; Electron traps; Heat treatment; Hydrogen; MOSFETs; Semiconductor films; Silicon on insulator technology; Substrates; Threshold voltage; Wafer bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation and Its Effects on Components and Systems, 1997. RADECS 97. Fourth European Conference on
  • Conference_Location
    Cannes
  • Print_ISBN
    0-7803-4071-X
  • Type

    conf

  • DOI
    10.1109/RADECS.1997.698857
  • Filename
    698857
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2795734