Title :
Physical characterization of electron trapping in Unibond(R) oxides
Author :
Gruber, O. ; Paillet, Ph ; Musseau, O. ; Marcandella, C. ; Aspar, B. ; Auberton-Hervè, A.J.
Author_Institution :
CEA, Centre d´´Etudes de Bruyeres-le-Chatel, France
Abstract :
In this work, we study the trapping properties of Unibond(R) oxides. We measure its radiative response under different irradiation conditions using both point-contact and MOS transistors. The results obtained show both hole and electron trapping, as previously observed in SIMOX. But in the Unibond(R) case, there is a positive shift of the threshold voltage at very high doses. Using a simple model, we explain this shift by considering a second type of electron traps
Keywords :
MOSFET; X-ray effects; electron traps; silicon-on-insulator; wafer bonding; SOI; Si-SiO2; Unibond oxide; electron trapping; point contact MOS transistor; radiative response; threshold voltage; Electric variables measurement; Electron traps; Heat treatment; Hydrogen; MOSFETs; Semiconductor films; Silicon on insulator technology; Substrates; Threshold voltage; Wafer bonding;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 1997. RADECS 97. Fourth European Conference on
Conference_Location :
Cannes
Print_ISBN :
0-7803-4071-X
DOI :
10.1109/RADECS.1997.698857
