Title :
Electrical characteristics of photodetector with transparent contact
Author :
Srithanachai, Itsara ; Ueamanapong, Surada ; Nararug, Budsara ; Niemchaoren, Surasak
Author_Institution :
Dept. of Electron. Eng., King Mongkut´´s Inst. of Technologh Ladkrabang, Bangkok, Thailand
Abstract :
The influence of annealing treatment on structure properties of the indium tin oxide (ITO) films has been investigated. ITO films annealed to improve quality films were prepared by RF sputtering system at 100 W. The samples at different thicknesses were deposited on non-heated glass slide at room temperature. Annealing temperature in pure nitrogen atmosphere for 15 minutes was varied at 200, 300, 400 and 500°C, respectively. Effect of nitrogen flow on properties of ITO films has been studied. It has been observed that the energy dispersive x-ray (EDX) analysis showed O, Sn and In content in the ITO films. The effect of thermal annealing on roughness of the surface and on the structure of deposited film was observed by scanning electron microscopy (SEM) that grain size increases, the transmission of ITO thin films increases after annealing by UV-vis spectroscopy and the resistivity decreases after annealed from 9 to 1 ohm-cm.
Keywords :
X-ray chemical analysis; annealing; electrical resistivity; grain size; indium compounds; photodetectors; scanning electron microscopy; semiconductor thin films; surface roughness; tin compounds; ultraviolet spectra; visible spectra; ITO; RF sputtering system; SEM; UV-vis spectroscopy; annealing treatment; electrical characteristics; energy dispersive X-ray analysis; grain size; indium tin oxide films; nitrogen flow; nonheated glass slide; photodetector; power 100 W; power 15 W; resistivity; scanning electron microscopy; structure properties; surface roughness; temperature 200 degC to 500 degC; temperature 293 K to 298 K; thermal annealing; time 15 min; transmission; transparent contact; Annealing; Conductivity; Indium tin oxide; Optical films; Photodetectors; Radio frequency; anneal; indium tin oxide (ITO); photodetector; transparent contact;
Conference_Titel :
Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology (ECTI-CON), 2012 9th International Conference on
Conference_Location :
Phetchaburi
Print_ISBN :
978-1-4673-2026-9
DOI :
10.1109/ECTICon.2012.6254203
