Title :
Equilibrium between spontaneous polarization, piezoelectric polarization and crystal defects for blue LEDs on sapphire substrate
Author_Institution :
Inf. & Control Inst., Weifang Univ., Weifang, China
Abstract :
High power InGaN-based blue LEDs have been commercialized despite the presence of a high dislocation density in the heteroepitaxial structures. Traditional trial-and-error techniques are very inefficient for improving the process of MOVCD. We analyze the relationship between spontaneous, piezoelectric polarization and crystal defaults by adjusting screening values. The simulation results shows to improve characteristics of blue LEDs on sapphire substrate, interfacial charges for piezoelectric and polarization should get equilibrium with crystal defects. And it may be the real lighting mechanism for InGaN-based blue LEDs with high dislocation density.
Keywords :
III-V semiconductors; dislocation density; gallium compounds; indium compounds; light emitting diodes; sapphire; wide band gap semiconductors; Al2O3; InGaN; MOVCD; blue LED; crystal defaults; crystal defects; dislocation density; heteroepitaxial structures; interfacial charges; sapphire substrate; screening values; spontaneous piezoelectric polarization; spontaneous polarization; trial-and-error techniques; Crystals; Gallium nitride; Light emitting diodes; Silicon; Spontaneous emission; Substrates; MOCVD; crystal fault; piezoelectric polarization; simulation; spontaneous polarization;
Conference_Titel :
Mechanic Automation and Control Engineering (MACE), 2011 Second International Conference on
Conference_Location :
Hohhot
Print_ISBN :
978-1-4244-9436-1
DOI :
10.1109/MACE.2011.5987179