DocumentCode
2795973
Title
Fermi Level Position in the Cadmium Telluride Detector
Author
Andreev, Alexey ; Grmela, Lubomir
Author_Institution
Brno Univ. of Technol., Brno
fYear
2007
fDate
9-13 May 2007
Firstpage
143
Lastpage
147
Abstract
The Fermi level position behavior in the CdTe single crystal was analyzed. The CdTe sample is p-type with the acceptor concentration NA =1016 cm-3. The CdTe sample transport characteristics were measured during time period of 17 hours. During this measurement the temperature was increased from 300 K up to 400 K and then decreased down to 300 K. The Fermi level position was calculated for this measurement. Calculations show that the Fermi level position doesn ´t change simultaneously with the temperature changing. The holes concentration depends on the Fermi level. The closer the Fermi level to the acceptor level, the higher the holes concentration.
Keywords
Fermi level; II-VI semiconductors; cadmium compounds; CdTe; Fermi level position; acceptor concentration; acceptor level; cadmium telluride detector; holes concentration; single crystal; Cadmium compounds; Electrical resistance measurement; Electrons; Energy states; Ocean temperature; Sea measurements; Sea surface; Solids; Temperature measurement; Time measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics Technology, 30th International Spring Seminar on
Conference_Location
Cluj-Napoca
Print_ISBN
987-1-4244-1218-1
Electronic_ISBN
987-1-4244-1218-1
Type
conf
DOI
10.1109/ISSE.2007.4432836
Filename
4432836
Link To Document