• DocumentCode
    2795973
  • Title

    Fermi Level Position in the Cadmium Telluride Detector

  • Author

    Andreev, Alexey ; Grmela, Lubomir

  • Author_Institution
    Brno Univ. of Technol., Brno
  • fYear
    2007
  • fDate
    9-13 May 2007
  • Firstpage
    143
  • Lastpage
    147
  • Abstract
    The Fermi level position behavior in the CdTe single crystal was analyzed. The CdTe sample is p-type with the acceptor concentration NA =1016 cm-3. The CdTe sample transport characteristics were measured during time period of 17 hours. During this measurement the temperature was increased from 300 K up to 400 K and then decreased down to 300 K. The Fermi level position was calculated for this measurement. Calculations show that the Fermi level position doesn ´t change simultaneously with the temperature changing. The holes concentration depends on the Fermi level. The closer the Fermi level to the acceptor level, the higher the holes concentration.
  • Keywords
    Fermi level; II-VI semiconductors; cadmium compounds; CdTe; Fermi level position; acceptor concentration; acceptor level; cadmium telluride detector; holes concentration; single crystal; Cadmium compounds; Electrical resistance measurement; Electrons; Energy states; Ocean temperature; Sea measurements; Sea surface; Solids; Temperature measurement; Time measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics Technology, 30th International Spring Seminar on
  • Conference_Location
    Cluj-Napoca
  • Print_ISBN
    987-1-4244-1218-1
  • Electronic_ISBN
    987-1-4244-1218-1
  • Type

    conf

  • DOI
    10.1109/ISSE.2007.4432836
  • Filename
    4432836