DocumentCode :
2795973
Title :
Fermi Level Position in the Cadmium Telluride Detector
Author :
Andreev, Alexey ; Grmela, Lubomir
Author_Institution :
Brno Univ. of Technol., Brno
fYear :
2007
fDate :
9-13 May 2007
Firstpage :
143
Lastpage :
147
Abstract :
The Fermi level position behavior in the CdTe single crystal was analyzed. The CdTe sample is p-type with the acceptor concentration NA =1016 cm-3. The CdTe sample transport characteristics were measured during time period of 17 hours. During this measurement the temperature was increased from 300 K up to 400 K and then decreased down to 300 K. The Fermi level position was calculated for this measurement. Calculations show that the Fermi level position doesn ´t change simultaneously with the temperature changing. The holes concentration depends on the Fermi level. The closer the Fermi level to the acceptor level, the higher the holes concentration.
Keywords :
Fermi level; II-VI semiconductors; cadmium compounds; CdTe; Fermi level position; acceptor concentration; acceptor level; cadmium telluride detector; holes concentration; single crystal; Cadmium compounds; Electrical resistance measurement; Electrons; Energy states; Ocean temperature; Sea measurements; Sea surface; Solids; Temperature measurement; Time measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics Technology, 30th International Spring Seminar on
Conference_Location :
Cluj-Napoca
Print_ISBN :
987-1-4244-1218-1
Electronic_ISBN :
987-1-4244-1218-1
Type :
conf
DOI :
10.1109/ISSE.2007.4432836
Filename :
4432836
Link To Document :
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