On the mechanism of dielectric loss in ion-implanted PET film

Author

De-Min, Tu ; Bao-Feng, Xi ; Rong-Sheng, Liu ; Hong-Cai, Wu

Author_Institution

Dept. of Electr. Eng., Xi´´an Jiaotong Univ., China

fYear

1991

fDate

8-12 Jul 1991

Firstpage

1076

Abstract

The effects of 180 keV Ar⁺, B⁺, P⁺, and As⁺ implantation on the dielectric properties of polyethylene terephthalate (PET) film have been studied. It is shown that PET film subjected to ion implantation exhibits a sharp relaxation peak on the curve of dielectric loss tangent vs. frequency and its capacitance is enhanced by 9.6 times. The depth of ion implantation is only 0.73 μm at a 38 μm thickness of PET film. Finally, the dielectric behavior of ion-implanted PET is interpreted as the tunneling transport of electrons and the space charge effect

Keywords

dielectric losses; ion implantation; organic insulating materials; polymer films; 0.73 micron; 180 keV; 38 micron; Ar⁺; As⁺; B⁺; P⁺; PET; capacitance; depth; dielectric behavior; dielectric loss tangent; dielectric properties; frequency effect; ion implantation; permittivity; polyethylene terephthalate; relaxation peak; space charge effect; thickness; tunneling transport of electrons; Argon; Capacitance; Dielectric films; Dielectric losses; Frequency; Ion implantation; Plastic films; Polyethylene; Positron emission tomography; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Properties and Applications of Dielectric Materials, 1991., Proceedings of the 3rd International Conference on

Conference_Location

Tokyo

Print_ISBN

0-87942-568-7

Type

conf

DOI

10.1109/ICPADM.1991.172261

Filename

172261