The design of a high sensitivity InGaAs/InP quadrant PIN photodetector for pointing, acquisition and tracking applications in space

Author

Lee, W.S. ; Bourgie, F. ; Hadjifotiou, A.

Author_Institution

STC Technol. Ltd., Harlow, UK

fYear

1990

fDate

32885

Firstpage

42430

Lastpage

42433

Abstract

One of the key components is the photodetector for positioning, acquisition and tracking. A figure of merit for performance accuracy is the minimum optical power required for a given noise equivalent angle (NEA). Based on the InGaAs/InP PIN structure, the design study examines how the detector parameters can be optimised to improve the system performance accuracy. The choice of layer structure and the expected performance are analysed. The design for high sensitivity over a wide spectral range of between 850 to 1550 nm has also been explored. The device fabrication technology is chosen to allow for future optoelectronic integration and two-dimensional array development

Keywords

III-V semiconductors; gallium arsenide; indium compounds; optical communication equipment; photodetectors; satellite relay systems; tracking systems; 850 to 1550 nm; III-V semiconductor; InGaAs-InP; PIN photodetector; acquisition; detector parameters; fabrication technology; layer structure; minimum optical power; noise equivalent angle; optical communication; optoelectronic integration; pointing; positioning; satellite systems; space; system performance accuracy; tracking; two-dimensional array;

fLanguage

English

Publisher

iet

Conference_Titel

Optical Intersatellite Links and On-Board Techniques, IEE Colloquium on

Conference_Location

London

Type

conf

Filename

189649