Planar InP/InGaAs avalanche photodiodes fabricated using silicon implantation and two stage atmospheric pressure MOVPE

High bit rate communications systems require detectors with fast response, low noise and high responsivity in the wavelength range 1.3-1.55 μm. InP/InGaAs avalanche photodiodes (APDs) satisfy these requirements. The separate absorption, grading and multiplication (SAGM) structure based designs place a very tight constraint on the doping and thickness of the doped InP layer used to control the field in the InGaAs absorption region. The authors describe the design, fabrication and performance of SAGM APDs using atmospheric pressure MOVPE to obtain large areas of uniform low doped material and silicon implantation to define the field control layer