Title :
Enhanced dielectric breakdown lifetime of the copper/silicon nitride/silicon dioxide structure
Author :
Takeda, Ken-ichi ; Hinode, Kenji ; Oodake, Ichirou ; Oohashi, Naofumi ; Yamaguchi, Hizuru
Author_Institution :
Central Res. Lab., Hitachi Ltd., Kokubunji, Japan
fDate :
March 31 1998-April 2 1998
Abstract :
Time-dependent dielectric breakdown (TDDB) of MIS and MIM capacitors with Cu electrodes is investigated. The dielectric breakdown lifetime strongly depends on (1) the material and (2) the electric field strength of the dielectrics in contact with the Cu anode, while the dependence of the TDDB lifetime on the dielectric thickness and the capacitor structure (single-layer or multilayer) is small. In the case of the applied voltage and the total thickness of the dielectrics being constant, the layered SiN-SiO/sub 2/ structure with thinner p-SiN has higher resistance to dielectric breakdown than that of a monolayer structure (SiN, SiO/sub 2/). This higher resistance to breakdown is because of the higher dielectric constant and the higher TDDB endurance of SiN.
Keywords :
MIM devices; MIS capacitors; copper; dielectric thin films; electric breakdown; electric strength; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; integrated circuit testing; silicon compounds; Cu anode; Cu electrodes; Cu-SiN; Cu-SiN-SiO/sub 2/; Cu-SiO/sub 2/; MIM capacitors; MIS capacitors; SiN TDDB endurance; TDDB; TDDB lifetime; copper/silicon nitride/silicon dioxide structure; dielectric breakdown lifetime; dielectric breakdown resistance; dielectric constant; dielectric thickness; electric field strength; layered SiN-SiO/sub 2/ structure; monolayer structure; multilayer capacitor structure; single layer capacitor structure; time-dependent dielectric breakdown; Anodes; Breakdown voltage; Copper; Dielectric breakdown; Dielectric constant; Dielectric materials; Electrodes; MIM capacitors; Nonhomogeneous media; Silicon compounds;
Conference_Titel :
Reliability Physics Symposium Proceedings, 1998. 36th Annual. 1998 IEEE International
Conference_Location :
Reno, NV, USA
Print_ISBN :
0-7803-4400-6
DOI :
10.1109/RELPHY.1998.670439