Title :
Radiation hardness of pseudomorphic HEMT and dual-gate GaAs MES-FET MMICs
Author :
Matsuzaki, K. ; Nemoto, N. ; Nakamura, E. ; Akutsu, T. ; Matsuda, S. ; Yajima, K. ; Sasaki, H. ; Komaru, M. ; Katoh, T. ; Kashiwa, T. ; Asano, T. ; Mizuguchi, K.
Author_Institution :
Electron. & Inf. Technol. Lab., Nat. Space Dev. Agency of Japan, Tokyo, Japan
Abstract :
The effects of Co-60 γ-ray irradiation under DC operation for two types of monolithic microwave integrated circuits (MMICs), Pseudomorphic HEMT (PHEMT) and Dual-Gate GaAs MES-FET, were investigated. These two types of MMICs have an excellent radiation hardness exceeding 107 rad(Si). We considered that degradation mechanisms of P-HEMT and MES-FET were the decrease of two dimensional electron gas (2DEG) carrier density and increase of electron traps near the Schottky gate electrode
Keywords :
HEMT integrated circuits; III-V semiconductors; MESFET integrated circuits; carrier density; electron traps; field effect MMIC; gallium arsenide; gamma-ray effects; radiation hardening (electronics); two-dimensional electron gas; 1E7 rad; DC operation; GaAs; Schottky gate electrode; carrier density; dual-gate GaAs MESFET MMIC; electron traps; gamma ray irradiation; pseudomorphic HEMT MMIC; radiation hardness; two dimensional electron gas; Gallium arsenide; HEMTs; Laboratories; Low-noise amplifiers; MMICs; Microwave devices; Microwave integrated circuits; Monolithic integrated circuits; PHEMTs; Passivation;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 1997. RADECS 97. Fourth European Conference on
Conference_Location :
Cannes
Print_ISBN :
0-7803-4071-X
DOI :
10.1109/RADECS.1997.698865
