DocumentCode :
2797211
Title :
Microstructure and properties of aluminous electrical porcelain doped with BaCO3
Author :
Du, Haiqin ; Shi, Qiang ; He, Guoxin ; Jiang, Hong
Author_Institution :
Hunan Univ., Changsha, China
fYear :
1991
fDate :
8-12 Jul 1991
Firstpage :
1234
Abstract :
Bauxite-feldspar-clay (BFC) and alumina-feldspar-clay (AFC), two series of aluminous electrical porcelain, have been prepared. The influence of BaCO3 on these porcelain bodies has been studied. The additions of BaCO3 were 0, 0.5, 1, 2, 4, and 8 wt.%, respectively. The optimum sintering temperature was determined before the bodies were burned. X-ray diffraction and scanning electron microscopy were used to analyze the microstructure of the bodies. As the percentage of BaCO3 rises, the glassy phase content increases, and the corundum and mullite crystalline content declines correspondingly. Volume resistivity increases with increase of BaCO3 content and declines when temperature rises. To produce high volume resistivity the DC insulator low-sodium feldspar as well as BaCO3 as additive is required. The ideal percentage of BaCO 3 added is considered to be around 2 wt.%
Keywords :
X-ray diffraction examination of materials; dielectric properties of solids; insulating materials; scanning electron microscope examination of materials; sintering; X-ray diffraction; alumina-feldspar-clay; aluminous electrical porcelain; bauxite-feldspar-clay; corundum crystalline content; glassy phase content; mullite crystalline content; scanning electron microscopy; sintering temperature; volume resistivity; Chemicals; Conductivity; Crystallization; Dielectrics and electrical insulation; Impurities; Mechanical factors; Microstructure; Porcelain; Raw materials; Tellurium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Properties and Applications of Dielectric Materials, 1991., Proceedings of the 3rd International Conference on
Conference_Location :
Tokyo
Print_ISBN :
0-87942-568-7
Type :
conf
DOI :
10.1109/ICPADM.1991.172303
Filename :
172303
Link To Document :
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