DocumentCode :
2797400
Title :
High aspect ratio nano-scale CFX structures fabricated by deep-rie
Author :
Arakawa, Takahiro ; Kusakawa, Hiroyuki ; Shoji, Shuichi
Author_Institution :
Waseda Univ., Tokyo
fYear :
2007
fDate :
21-25 Jan. 2007
Firstpage :
287
Lastpage :
290
Abstract :
High aspect ratio (>500) nano-scale CFx (fluorocarbon) "tube" and "test-tube" arrays were realized using Deep Reactive Ion Etching (RIE). Sidewall CFx nano structures of 200 nm in thickness formed during Deep RIE passivation process were used for the purpose. The film thickness of CFx was controlled from 200 nm to 500 nm, and the height more than 100 mum was available. As a result, the aspect ratio is larger than 500. This fluorocarbon tube and test-tube array are useful tools for chemical and biological applications.
Keywords :
nanotechnology; sputter etching; deep RIE passivation process; deep reactive ion etching; deep-RIE; fluorocarbon; high aspect ratio nanoscale CFx structures; sidewall CFx nanostructures; size 200 nm to 500 nm; test-tube arrays; Chemicals; Etching; Microchannel; Nanobioscience; Nanostructures; Passivation; Polymer films; Resists; Semiconductor films; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems, 2007. MEMS. IEEE 20th International Conference on
Conference_Location :
Hyogo
ISSN :
1084-6999
Print_ISBN :
978-1-4244-095-5
Electronic_ISBN :
1084-6999
Type :
conf
DOI :
10.1109/MEMSYS.2007.4432970
Filename :
4432970
Link To Document :
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