A 0.6 volt class-AB CMOS voltage follower with bulk-driven quasi-floating gate super source follower

Author

Wangtaphan, Skawrat ; Kasemsuwan, Varakorn

Author_Institution

Sch. of Electron. Eng., King Mongkut´´s Inst. of Technol. Ladkrabang (KMITL), Bangkok, Thailand

fYear

2012

fDate

16-18 May 2012

Firstpage

1

Lastpage

4

Abstract

This paper presents a design of 0.6 V class-AB voltage follower (VF) using 0.13 μm CMOS technology. The follower is developed based on the super source follower (SSF) using bulk-driven and quasi-floating gate (QFG) techniques. The proposed VF can operate at low voltage without DC level shift between the input and output terminals. The simulation results show the total harmonic of 0.3 % for an input/output voltage of 0.18 V_pp at 100 kHz (R_L//C_L=5 kΩ//100 pF). The power dissipation is found to be 38 μW.

Keywords

CMOS analogue integrated circuits; operational amplifiers; CMOS technology; QFG technique; bulk-driven quasifloating gate supersource follower; class-AB CMOS voltage follower; frequency 100 kHz; power 38 muW; power dissipation; size 0.13 mum; voltage 0.18 V; voltage 0.6 V; CMOS integrated circuits; Impedance; Logic gates; Low voltage; Power demand; Transconductance; Transistors; buffer; bulk-driven; low power; low volt; quasi-floating gate; super source follower;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology (ECTI-CON), 2012 9th International Conference on

Conference_Location

Phetchaburi

Print_ISBN

978-1-4673-2026-9

Type

conf

DOI

10.1109/ECTICon.2012.6254300

Filename

6254300