Title :
Modelling of InGaAs-InP electro-absorptive Fabry-Perot modulators
Author :
Guy, D.R.P. ; Apsley, N.
Author_Institution :
R. Signals & Radar Establ., Malvern, UK
Abstract :
The relation between symmetric and asymmetric Fabry-Perot cavities is investigated in the context of electro-absorptive semiconductor reflection modulators. The use of cavities of intermediate asymmetry is proposed in order to produce high-contrast modulation either at lower voltage than in the original asymmetric case, or in materials with lower absorption coefficient such as bulk III-V semiconductors and InP-based multiple quantum wells
Keywords :
III-V semiconductors; electro-optical devices; electroabsorption; gallium arsenide; indium compounds; optical modulation; semiconductor quantum wells; Fabry-Perot modulators; InGaAs-InP; MQW; asymmetric Fabry-Perot cavities; electroabsorptive modulators; high-contrast modulation; modelling; semiconductor reflection modulators; symmetric Fabry-Perot cavities;
Conference_Titel :
Modelling of Optoelectronic Devices, IEE Colloquium on
Conference_Location :
London
